composite transistors 1 publication date: august 2003 sjj00283aed NP0G3A3 silicon pnp epitaxial planar type (tr1) silicon npn epitaxial planar type (tr2) for digital circuits features ? sss-mini type 6-pin package, reduction of the mounting area and assembly cost by one half ? maximum package height (0.4 mm) contributes to develop thinner equipments basic part number ? unr11a3 unr12a3 absolute maximum ratings t a = 25 c marking symbol: 3d internal connection unit: mm 1: base (tr1) 4: collector (tr2) 2: base (tr2) 5: emitter (tr1) 3: emitter (tr2) 6: collector (tr1) sssmini6-f1 package 0 to 0.02 654 1 2 3 1.00 0.04 (0.10) 0.10 1.00 0.05 display at no.1 lead 0.80 0.05 0.10 (0.35) (0.35) 0.37 +0.03 - 0.02 0.12 +0.03 - 0.02 1 tr2 tr1 23 4 6 5 parameter symbol rating unit tr1 collector-base voltage v cbo ? 50 v (emitter open) collector-emitter voltage v ceo ? 50 v (base open) collector current i c ? 80 ma tr2 collector-base voltage v cbo 50 v (emitter open) collector-emitter voltage v ceo 50 v (base open) collector current i c 80 ma overall total power dissipation * p t 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c note) * : measuring on substrate at 17 mm 10 mm 1 mm
NP0G3A3 2 sjj00283aed electrical characteristics t a = 25 c 3 c ? tr1 ? tr2 parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 50 v, i b = 0 0.5 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 0 0.1 ma forward current transfer ratio h fe v ce = 10 v, i c = 5 ma 80 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 3.5 v, r l = 1 k ? 0.2 v input resistance r 1 ? 30% 47 + 30% k ? resistance ratio r 1 / r 2 0.8 1.0 1.2 ? transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz p t ? t a parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v collector-base cutoff current (emitter open) i cbo v cb = ? 50 v, i e = 0 ? 0.1 a collector-emitter cutoff current (base open) i ceo v ce = ? 50 v, i b = 0 ? 0.5 a emitter-base cutoff current (collector open) i ebo v eb = ? 6 v, i c = 0 ? 0.1 ma forward current transfer ratio h fe v ce = ? 10 v, i c = ? 5 ma 80 ? collector-emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 0.3 ma ? 0.25 v output voltage high-level v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 1 k ?? 4.9 v output voltage low-level v ol v cc = ? 5 v, v b = ? 3.5 v, r l = 1 k ?? 0.2 v input resistance r 1 ? 30% 47 + 30% k ? resistance ratio r 1 / r 2 0.8 1.0 1.2 ? transition frequency f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz common characteristics chart 0 80 120 40 0 140 120 40 100 80 20 60 total power dissipation p t ( mw ) ambient temperature t a ( c ) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
NP0G3A3 3 sjj00283aed i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o characteristics charts of tr1 0 ? 12 ? 10 ?8 ? 2 ? 6 ?4 0 ? 80 ? 60 ? 40 ? 20 t a = 25 c i b = ? 10 ma ? 9 ma ? 8 ma ? 7 ma ? 6 ma ? 5 ma ? 4 ma ? 3 ma ? 2 ma ? 1 ma collector current i c (ma) collector-emitter voltage v ce (v) ? 0.1 ? 1 ?1 0 ? 100 ? 0.01 ? 10 ? 1 ? 0.1 t a = 75 c 25 c ? 25 c i c / i b = 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) ? 1 ? 10 ? 100 0 250 200 150 100 50 t a = 75 c 25 c ? 25 c v ce = ? 10 v forward current transfer ratio h fe collector current i c (ma) 0 ? 40 ? 32 ? 8 ? 24 ? 16 1 10 f = 1 mhz t a = 25 c collector-base voltage v cb (v) collector output capacitance (common base, input open circuited) c ob (pf) 0 ? 12 ? 8 ? 4 ? 1 ? 100 ? 10 v o = ? 5 v t a = 25 c input voltage v in (v) output current i o (ma) ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 100 ? 10 ? 1 v o = ? 0.2 v t a = 25 c output current i o (ma) input voltage v in (v)
NP0G3A3 4 sjj00283aed i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o characteristics charts of tr2 012 10 8 26 4 collector-emitter voltage v ce ( v ) 0 80 60 40 20 collector current i c ( ma ) 5 ma 4 ma 3 ma 2 ma 1 ma i b = 10 ma 9 ma 6 ma 8 ma 7 ma t a = 25 c 0.1 10 1 100 0.01 10 0.1 1 collector current i c (ma) collector-emitter saturation voltage v ce(sat) (v) i c / i b = 10 t a = 75 c ? 25 c 25 c 1 10 100 collector current i c ( ma ) 0 50 100 150 200 250 forward current transfer ratio h fe t a = 75 c 25 c ? 25 c v ce = 10 v 016 8243240 1 10 collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) f = 1 mhz t a = 25 c 0 2.0 0.5 1.5 1.0 0.1 10 1 input voltage v in ( v ) output current i o ( ma ) v o = 5 v t a = 25 c 1 10 100 1 100 10 output current i o ( ma ) input voltage v in ( v ) v o = 0.2 v t a = 25 c
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
|
